Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Fully atomic layer deposition induced InAlO thin film transistors;Vacuum;2024-09
2. Preparation and performance optimization of HfAlO hybrid gate dielectric thin films driven by solution;Journal of Sol-Gel Science and Technology;2024-07-07
3. Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings;Heliyon;2024-07
4. Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance;Journal of Science: Advanced Materials and Devices;2024-06
5. Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlOx on IWO Thin-Film Transistors;IEEE Transactions on Nanotechnology;2024
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