Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlO<sub>x</sub> on IWO Thin-Film Transistors-Reference-Cited by-同舟云学术

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Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlO_x on IWO Thin-Film Transistors

Published:2024 Issue: Volume:23 Page:422-426
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Chen Yi-Xuan¹^ORCID,Li Fu-Jyuan²^ORCID,Wang Yi-Lin²^ORCID,Lee Meng-Chien³^ORCID,Li Hui-Hsuan³^ORCID,Lin Yu-Hsien²^ORCID,Chien Chao-Hsin³^ORCID

Affiliation:

1. Department of Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Department of Electronic Engineering, National United University, Miaoli, Taiwan

3. Department of Electronics Engineering and the Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Taiwan Semiconductor Research Institute

National Chiao Tung University Nano Facility Center

Taiwan Instrument Research Institute, National Applied Research Laboratories

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7729/10368312/10518088.pdf?arnumber=10518088

Reference42 articles.

1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

2. High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2Gate Dielectric

3. High mobility transparent conductive W-doped In2O3 thin films prepared at low substrate temperature and its application to solar cells

4. Al-Doped ZnO Transparent Conducting Glass With an IGZO Buffer Layer for Dye-Sensitized Solar Cells

5. A Compute-in-Memory Hardware Accelerator Design With Back-End-of-Line (BEOL) Transistor Based Reconfigurable Interconnect

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