Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance-Reference-Cited by-同舟云学术

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Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance

Published:2024-06 Issue:2 Volume:9 Page:100722
ISSN:2468-2179
Container-title:Journal of Science: Advanced Materials and Devices
language:en
Short-container-title:Journal of Science: Advanced Materials and Devices

Author:

Zhao Ming-Jie,Wang Yao-Tian,Yan Jia-Hao,Li Hai-Cheng,Xu Hua,Wuu Dong-Sing,Wu Wan-Yu,Lai Feng-Min,Lien Shui-Yang^ORCID,Zhu Wen-Zhang

Funder

Fujian Provincial Natural Science Foundation

Publisher

Elsevier BV

Reference40 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors;Kamiya;Sci. Technol. Adv. Mater.,2010

2. Effect of bandgap widening on negative-bias illumination stress stability of oxide thin-film transistors;Deng;IEEE Trans. Electron. Dev.,2021

3. Review of recent advances in flexible oxide semiconductor thin-film transistors;Sheng;J. Infect. Dis.,2017

4. High-mobility and good-stability thin-film transistors with scandium-substituted indium oxide semiconductors;Song;IEEE Trans. Electron. Dev.,2016

5. Low-temperature fabrication of sputtered high- k HfO2 gate dielectric for flexible a-IGZO thin film transistors;Yao;Appl. Phys. Lett.,2018

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