Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

Author:

Yao Rihui1ORCID,Zheng Zeke1,Xiong Mei12,Zhang Xiaochen1,Li Xiaoqing1,Ning Honglong1ORCID,Fang Zhiqiang1,Xie Weiguang3ORCID,Lu Xubing4,Peng Junbiao1

Affiliation:

1. Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

2. Shenzhen China Star Optoelectronics Technology Co., Ltd (CSOT), Shenzhen 518132, China

3. Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics and Department of Electronic Engineering, Jinan University, Guangzhou 510632, China

4. Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China

Funder

National Key R&D Program of China

NSFC

Science and Technology Project of Guangdong Province

the Project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme (2016)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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