Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers-Reference-Cited by-同舟云学术

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Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers

Published:2010-10-22 Issue:48 Volume:22 Page:5512-5516
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Park Jae Chul,Kim Sangwook,Kim Sunil,Kim Changjung,Song Ihun,Park Youngsoo,Jung U-In,Kim Dae Hwan,Lee Jang-Sik

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference26 articles.

1. K. Nomura H. Ohta A. Takagi T. Kamiya M. Hirano H. Hosono Nature 2004 432 488

2. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

3. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

4. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

5. Recent progress in transparent oxide semiconductors: Materials and device application

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