Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD-Reference-Cited by-同舟云学术

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Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD

Published:2013-04 Issue: Volume:368 Page:92-96
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liu Yuemei,Qin Fuwen,Zhang Dong,Bian Jiming,Zhao Yue,Wang Enping,Wang Shuai,Zhong Miaomiao,Ju Zhenhe

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE

3. Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications

4. GaN based III–V nitrides by molecular beam epitaxy

5. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

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1. Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition;Scientific Reports;2024-05-13

2. Ammonia-free epitaxy of single-crystal InN using a plasma-integrated gas-injection module;Applied Materials Today;2022-06

3. Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips;ACS Applied Electronic Materials;2021-01-20

4. Novel Epitaxy for Nitride Semiconductors Using Plasma Technology;physica status solidi (a);2020-11-12

5. Growth of high-quality near-ultraviolet light-emitting diodes used InGaN/GaN multiple quantum wells;Vacuum;2020-08

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