GaN based III–V nitrides by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. GaN, AlN, and InN: A review
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
3. for LEDs for lighting and displays, see: H. Morkoç and S.N. Mohammad, Sci. Mag., in press
4. Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE
5. Conductivity Control of AlGaN. Fabrication of AlGaN/GaN Multi-Heterośtructure and their Application to UV/Blue Light Emitting Devices
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3. Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching;Applied Physics A;2016-05-24
4. Study of Oxygen Implantation in GaN/Sapphire;Physics of Semiconductor Devices;2014
5. Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD;Journal of Crystal Growth;2013-04
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