Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications-Reference-Cited by-同舟云学术

Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

Published:2023 Issue:4 Volume:5 Page:1023-1042
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Abdullah Ameer¹,Kulkarni Mandar A.¹,Thaalbi Hamza¹^ORCID,Tariq Fawad¹,Ryu Sang-Wan¹^ORCID

Affiliation:

1. Department of Physics, Chonnam National University, Gwangju 61186, Republic of Korea

Abstract

This review article focuses on the synthesis of 1D GaN nanowires and shell/core heterostructures using vapor–liquid–solid (VLS) and vapor–solid (VS) growth modes with MOCVD on various substrates for energy conversion and LED applications.

Funder

Korea Basic Science Institute

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D2NA00711H

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