Abnormal variation of the growth rate under high NH3injected regime in the growth of GaN by NH3-source MBE
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=3/a=035504/pdf
Reference37 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
3. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
4. Growth of single crystal GaN substrate using hydride vapor phase epitaxy
5. GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source
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1. Molecular beam epitaxy growth of GaN films on a tungsten carbide/Si template;Thin Solid Films;2018-03
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