Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications-Reference-Cited by-同舟云学术

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Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications

Published:2000-05 Issue:1-3 Volume:74 Page:107-112
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Razeghi M,Sandvik P,Kung P,Walker D,Mi K,Zhang X,Kumar V,Diaz J,Shahedipour F

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Semiconductor ultraviolet detectors

2. AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

3. Visible blind GaN p-i-n photodiodes

4. High-quality visible-blind AlGaN p-i-n photodiodes

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1. Responsivity Characteristics of Zno Schottky Ultraviolet Photodetectors with High Gain;SSRN Electronic Journal;2022

2. Ferroelectric Localized Field-Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current;Small;2018-05

3. Metal–insulator–metal photomonitor for optical waveguides at telecom wavelengths;Applied Physics Express;2016-11-14

4. Recent advances in ultraviolet photodetectors;Materials Science in Semiconductor Processing;2015-01

5. Enhanced quantum efficiency of AlGaN photodetectors by patterned growth;physica status solidi (a);2014-11-05

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