Ammonia-free epitaxy of single-crystal InN using a plasma-integrated gas-injection module
Author:
Publisher
Elsevier BV
Subject
General Materials Science
Reference50 articles.
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1. Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition;Crystal Research and Technology;2024-05-30
2. Recent researches of GaN-based materials and devices in NU-AIST;2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2023-11-16
3. Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2023-07-10
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