Author:
Shiraishi Yutaka,Maeda Susumu,Nakamura Kozo
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. The mechanism of swirl defects formation in silicon
2. K. Nakamura, S. Maeda, S. Togawa, T. Saishoji, J. Tomioka, High Purity Silicon VI, in: C.L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, H.J. Dawson, (Eds.), Electrochemical Society, Pennington, NJ, 2000, PV2000-17, p. 31.
3. Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection
4. Gas flow effect on global heat transport and melt convection in Czochralski silicon growth
5. Experimental observation and numerical simulation of wave patterns in a Czochralski silicon melt
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献