Numerical analysis of solid–liquid interface shape during large-size single crystalline silicon with Czochralski method
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics
Link
http://link.springer.com/content/pdf/10.1007/s12598-017-0888-7.pdf
Reference32 articles.
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2. Chen JC, Chiang PY, Nguyen TH, Hu C, Chen CH, Liu CC. Numerical simulation of the oxygen concentration distribution in silicon melt for different crystal lengths during Czochralski growth with a transverse magnetic field. J Cryst Growth. 2016;452(15):6.
3. Zhao WH, Liu LJ. Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket. J Cryst Growth. 2017;458(15):31.
4. Prostomolotov AI, Verezub NA, Mezhennii MV, Reznik VY. Thermal optimization of CZ bulk growth and wafer annealing for crystalline dislocation-free silicon. J Cryst Growth. 2011;318(1):187.
5. Su WJ, Zuo R, Mazaev K, Kalaev V. Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in Cz Si furnace. J Cryst Growth. 2010;312(4):495.
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