Investigation of the Influence of Solid–Liquid Interface Shape Based on the Jordan Model on Cz-Silicon Dislocation Defects-Reference-Cited by-同舟云学术

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Investigation of the Influence of Solid–Liquid Interface Shape Based on the Jordan Model on Cz-Silicon Dislocation Defects

Published:2023-11-18 Issue: Volume: Page:
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Li Tai,Zhao Liang,Huang Zhenling,Zhao Liang,Shi Yindong,Li Shaoyun,Ren Yongsheng,Lv Guoqiang,Ma Wenhui

Funder

Major Science and Technology Projects in Yunnan Province

Key Research and Development Project of Yunnan Province

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-023-02762-3.pdf

Reference46 articles.

1. I. E. A. (IEA) World Energy Outlook 2020. https://www.iea.org/reports/world-energy-outlook-2020. Accessed 18 Jan 2023

2. Saga T (2010) Advances in crystalline silicon solar cell technology for industrial mass production. NPG Asia Mater 2(3):96–102

3. Lan CW, Hsieh CK, Hsu WC (2009) Czochralski silicon crystal growth for photovoltaic applications. In Crystal growth of Si for solar cells. Springer Berlin Heidelberg, pp 25–39. https://doi.org/10.1007/978-3-642-02044-5_2

4. See. International Technology Roadmap for Photovoltaic (ITRPV). https://www.vdma.org/international-technology-roadmap-photovoltaic. Accessed 18 Jan 2023

5. Dash WC (1959) Growth of silicon crystals free from dislocations. J Appl Phys 30(4):459–474

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