Three-dimensional numerical simulation of flow, thermal and oxygen distributions for a Czochralski silicon growth with in a transverse magnetic field-Reference-Cited by-同舟云学术

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Three-dimensional numerical simulation of flow, thermal and oxygen distributions for a Czochralski silicon growth with in a transverse magnetic field

Published:2014-09 Issue: Volume:401 Page:813-819
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen Jyh-Chen,Chiang Pei-Yi,Chang Ching-Hsin,Teng Ying-Yang,Huang Cheng-Chuan,Chen Chun-Hung,Liu Chien-Cheng

Funder

Bureau of Energy, Ministry of Economic Affairs of Taiwan, ROC

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Handbook of Semiconductor Silicon Technology, W.C. O’Mara, R.B. Herring, L.P. Hunt., (Eds.), 1990 Noyes Publications.

2. Convective phenomena in large melts including magnetic fields;Muiznieks;J. Cryst. Growth,2007

3. 3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates;Liu;J. Cryst. Growth,2005

4. Effects of crystal rotation rate on the melt–crystal interface of a CZ-Si crystal growth in a transverse magnetic field;Liu;J. Cryst. Growth,2008

5. Analysis of local segregation of impurities at a silicon melt–crystal interface during crystal growth in transverse magnetic field-applied Czochralski method;Kakimoto;J. Cryst. Growth,2009

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