Effect of horizontal magnetic field position on oxygen distribution in CZ silicon crystal growth
Author:
Funder
Natural Science Foundation of Fujian Province
Science, Technology and Innovation Commission of Shenzhen Municipality
Key Research and Development Program of Ningxia
Publisher
Elsevier BV
Reference37 articles.
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2. Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon;Liu;J. Cryst. Growth,2020
3. Effect of crucible rotation and crystal rotation on the oxygen distribution at the solid-liquid interface during the growth of Czochralski monocrystalline silicon under superconducting horizontal magnetic field;Zhang;Results Phys.,2019
4. DNS of rotating buoyancy– and surface tension–driven flow;Raufeisen;Int. J. Heat Mass Tran.,2008
5. Advanced approach for oxygen transport and crystallization front calculation in Cz silicon crystal growth;Borisov;J. Cryst. Growth,2022
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