Advanced approach for oxygen transport and crystallization front calculation in Cz silicon crystal growth-Reference-Cited by-同舟云学术

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Advanced approach for oxygen transport and crystallization front calculation in Cz silicon crystal growth

Published:2022-04 Issue: Volume:583 Page:126493
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Borisov D.,Artemyev V.,Kalaev V.,Smirnov A.,Kuliev A.,Zobel F.,Kunert R.,Turan R.,Aydin O.,Kabacelik I.

Funder

Foundation for Assistance to Small Innovative Enterprises in Science and Technology

Bundesministerium für Bildung und Forschung

Türkiye Bilimsel ve Teknolojik Araştirma Kurumu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Review of some aspects of single crystal growth using Czochralski crystal growth technique;Vegad;Proc. Technol.,2014

2. Direct numerical simulation of momentum and heat transport in idealized Czochralski crystal growth configurations;Wagner;Int. J. Heat Fluid Flow,2004

3. DNS of rotating buoyancy- and surface tension-driven flow;Raufeisen;Int. J. Heat Mass Transf.,2008

4. Application of turbulence modeling to the integrated hydrodynamic thermal-capillary model of Czochralski crystal growth of silicon;Kinney;J. Cryst. Growth,1993

5. Modelling analysis of oxygen transport during Czochralski growth of silicon crystals;Egorov;Mat. Res. Soc. Symp. Proc.,1998

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of horizontal magnetic field position on oxygen distribution in CZ silicon crystal growth;Vacuum;2024-07

2. Evaluating cooling tube effects on defect formation and distribution in Czochralski crystal growth;Journal of Materials Science: Materials in Electronics;2024-07

3. Extended Hypothesis for Reynolds Stress Tensor and Turbulent Heat Flux Modeling Within a Novel K‐ε Model for Prediction of Crystal Growth from the Melt;Crystal Research and Technology;2023-11-23

4. Three-Dimensional Simulation of Melt Convection and Oxygen Transport in CZ-Si Crystal Growth with Cusp Magnetic Fields;Crystals;2023-09-27

5. Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field;Coatings;2023-09-18

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