Modelling Analysis of Oxygen Transport During Czochralski Growth of Silicon Crystals-Reference-Cited by-同舟云学术

Modelling Analysis of Oxygen Transport During Czochralski Growth of Silicon Crystals

Published:1997 Issue: Volume:490 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Egorov Yu. E.,Makarov Yu. N.,Rudinsky E. A.,Smirnov E. M.,Zhmakin A. I.

Abstract

ABSTRACTGlobal model of oxygen transport in the melt and inert gas is proposed which is based on coupled two-dimensional stationary modeling of global heat transfer, laminar flow of inert gas and turbulent flow in Si melt, and transport of dissolved oxygen in the melt and SiO vapor in the gas. The model allows to study effects of process parameters like flow rate and pressure of inert gas, and rotation of the crucible on incorporation of oxygen into Si crystal.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference7 articles.

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3. Application of the energy-dissipation model of turbulence to the calculation of flow near a spinning disc

4. Oxygen transport analysis in Czochralski silicon melt by considering the oxygen evaporation from the melt surface

5. A numerical study on oxygen transport in silicon melt in a double-crucible method

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