Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon
Author:
Funder
New Energy and Industrial Technology Development Organization
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
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4. Dynamic global simulation of the Czochralski process I. Principles of the method;Van den Bogaert;J. Cryst. Growth,1997
5. Dynamic global simulation of the Czochralski process II. Analysis of the growth of a germanium crystal;Van den Bogaert;J. Cryst.Growth,1997
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