Effect of crucible rotation and crystal rotation on the oxygen distribution at the solid-liquid interface during the growth of Czochralski monocrystalline silicon under superconducting horizontal magnetic field-Reference-Cited by-同舟云学术

Effect of crucible rotation and crystal rotation on the oxygen distribution at the solid-liquid interface during the growth of Czochralski monocrystalline silicon under superconducting horizontal magnetic field

Published:2019-06 Issue: Volume:13 Page:102127
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Zhang Jing,Ren Jun-Chao,Liu Ding

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference18 articles.

1. Modeling and control of Czochralski silicon growth process;Liu,2015

2. A review of growth process modeling and control of Czochralski silicon single crystal;Liu;Control Theory Appl,2017

3. Numerical simulation of MHD oscillatory mixed convection in CZ crystal growth by Lattice Boltzmann method;Zhang;Result Phys,2018

4. Kakimoto K, Gao B, Liu X, et al. Growth of semiconductor silicon crystals. In: International summer school on crystal growth 2016;23(18):273–85.

5. A first-principle model of 300 mm Czochralski single-crystal Si production process for predicting crystal radius and crystal growth rate;Zheng;J Cryst Growth,2018

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