Effect of crucible rotation and crystal rotation on the oxygen distribution at the solid-liquid interface during the growth of Czochralski monocrystalline silicon under superconducting horizontal magnetic field
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference18 articles.
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2. A review of growth process modeling and control of Czochralski silicon single crystal;Liu;Control Theory Appl,2017
3. Numerical simulation of MHD oscillatory mixed convection in CZ crystal growth by Lattice Boltzmann method;Zhang;Result Phys,2018
4. Kakimoto K, Gao B, Liu X, et al. Growth of semiconductor silicon crystals. In: International summer school on crystal growth 2016;23(18):273–85.
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