Study on the effect of melt flow behavior on the uniformity of phosphorus doping during the growth of large-size n-type monocrystalline silicon by Czochralski method-Reference-Cited by-同舟云学术

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Study on the effect of melt flow behavior on the uniformity of phosphorus doping during the growth of large-size n-type monocrystalline silicon by Czochralski method

Published:2024-06 Issue: Volume:175 Page:108261
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Huang Zhenling,Zhao Liang,Li Tai,Kang Jiaming,Zhou Xiang,Li Shaoyuan,Ma Wenhui,Lv Guoqiang^ORCID,Ren Yongsheng

Funder

Shanxi Provincial Key Research and Development Project

Major Science and Technology Projects in Yunnan Province

Publisher

Elsevier BV

Reference31 articles.

1. Advances in solar photovoltaics: technology review and patent trends;Shubbak;Renew. Sustain. Energy Rev.,2019

2. Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method;Kivambe;J. Cryst. Growth,2014

3. Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates;Rotondaro;J. Electrochem. Soc.,1996

4. Efficiency limiting crystal defects in monocrystalline silicon and their characterization in production;Korsós;Sol. Energy Mater. Sol. Cell.,2018

5. Effects of induced current in crystals on the melt flow and the melt–crystal interface during industrial 300 mm czochralski silicon crystal growth under a transverse magnetic field;Chen;Cryst. Growth Des.,2023

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