Investigation of the Influence of Solid-Liquid Interface Shape Based on the Jordan Model on Cz-Silicon Dislocation Defects

Abstract

Abstract During the growth of Czochralski single crystal silicon, the change of solid-liquid interface shape leads to uneven distribution of thermal stress, and the concentration of thermal stress leads to crystal defects in the process of single crystal formation, which reduces the efficiency of solar cells. In order to avoid a large number of crystal defects caused by the concentration of thermal stress near the solid-liquid interface, the effect of the solid-liquid interface shape on thermal stresses is investigated in this study using numerical calculations to determine the most favourable solid-liquid interface shape for single crystal silicon growth. The results show that the von Mises stress on the m-shaped solid-liquid interface is smaller ; von Mises stress distribution on the solid-liquid interface of a shape is more uniform ; the von Mises stress on the solid-liquid interface of the n-shaped solid-liquid interface is large, and the von Mises stress can be released by controlling the solid-liquid flipping through a small range of pulling speed fluctuations, thereby reducing defects in single-crystal silicon.