Measuring the end-face of silicon boules using mid-infrared laser scanning
Author:
Affiliation:
1. Department of Physics and Technology
2. UiT The Arctic University of Norway
3. 9037 Tromsø
4. Norway
Abstract
Laser scanning is investigated to measure the deflection of the crystal–melt interface during Czochralski-growth of silicon.
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/CE/D1CE00264C
Reference20 articles.
1. Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals
2. Prediction of solid–liquid interface shape during CZ Si crystal growth using experimental and global simulation
3. Numerical Study of Melt Convection and Interface Shape in a Pilot Furnace for Unidirectional Solidification of Multicrystalline Silicon
4. Thermal stress induced dislocation distribution in directional solidification of Si for PV application
5. In-situ observation of solid-liquid interface shape by X-ray radiography during silicon single crystal growth
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1. Interface diagnostics: In-situ determination of crystal-melt interface shape evolutions via probing growth interface electromotive force;Acta Materialia;2022-10
2. Evaluation of crystalline structure quality of Czochralski-silicon using near-infrared tomography;Journal of Crystal Growth;2022-04
3. Three-Dimensional Reconstruction of Soybean Canopy Based on Multivision Technology for Calculation of Phenotypic Traits;Agronomy;2022-03-12
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