Numerical Study of Melt Convection and Interface Shape in a Pilot Furnace for Unidirectional Solidification of Multicrystalline Silicon
Author:
Affiliation:
1. Faculty of Physics, West University of Timisoara, Bd. V. Parvan 4, 300223 Timisoara, Romania
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg201123x
Reference19 articles.
1. Luque, A., Hegedus, A., Eds.Handbook of Photovoltaic Science and Engineering;Wiley:New York, 2003; p153.
2. Electron-beam-induced current study of grain boundaries in multicrystalline silicon
3. Chemical natures and distributions of metal impurities in multicrystalline silicon materials
4. About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock
5. Bulk multicrystalline silicon growth for photovoltaic (PV) application
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