Electron-beam-induced current study of grain boundaries in multicrystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1797548
Reference22 articles.
1. Structural and electrical charaterization of crystallographic defects in silicon ribbons
2. Carrier transport at grain boundaries in semiconductors
3. Direct calculation of two‐dimensional collection probability inpnjunction solar cells, and study of grain‐boundary recombination in polycrystalline silicon cells
4. Grain boundaries in semiconductors
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