Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection-Reference-Cited by-同舟云学术

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Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

Published:2002-08 Issue:4-5 Volume:5 Page:369-373
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kalaev V.V.,Lukanin D.P.,Zabelin V.A.,Makarov Yu.N.,Virbulis J.,Dornberger E.,von Ammon W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Effects of various magnetic field configurations on temperature distributions in Czochralski silicon melts

2. Study of oxygen transport in Czochralski growth of silicon

3. Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results

4. Hybrid finite-volume/finite-element simulation of heat transfer and melt turbulence in Czochralski crystal growth of silicon

5. Vacancy and self-interstitial concentration incorporated into growing silicon crystals

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1. Effect of horizontal magnetic field position on oxygen distribution in CZ silicon crystal growth;Vacuum;2024-07

2. Numerical analysis of constitutional supercooling in heavily doped silicon crystals grown using the Czochralski method;Journal of Crystal Growth;2022-11

3. Numerical investigation of impact of crystal diameter fluctuations on intrinsic point defects distribution in Si crystal grown by Czochralski method;Journal of Crystal Growth;2022-10

4. A modified hypothesis of Reynolds stress tensor modeling for mixed turbulent convection in crystal growth;Journal of Crystal Growth;2022-02

5. COMPARATIVE EVALUATION OF RANS EDDY-VISCOSITY TURBULENCE MODELS FOR CALCULATING THE SILICON MELT CONVECTION IN CRYSTAL GROWTH SYSTEMS;ST PETER POLY U J-PH;2022

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