Vacancy and self-interstitial concentration incorporated into growing silicon crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371642
Reference24 articles.
1. The mechanism of swirl defects formation in silicon
2. Vacancy-type microdefect formation in Czochralski silicon
3. The Direct Observation of Grown‐in Laser Scattering Tomography Defects in Czochralski Silicon
4. Transmission Electron Microscope Observation of “IR Scattering Defects” in As-Grown Czochralski Si Crystals
5. Octahedral void defects observed in the bulk of Czochralski silicon
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1. Importance of zero cross-point (Cp = 0) control between the vacancy and interstitial Si atom concentration curves to obtain a perfect Si ingot using Si melt growth;Journal of Crystal Growth;2024-10
2. Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution;Crystal Growth & Design;2024-07-18
3. Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer;Journal of Applied Physics;2024-06-17
4. Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal;Japanese Journal of Applied Physics;2024-03-01
5. Importance of Zero Cross-Point (Cp = 0) Control between the Vacancy and Interstitial Si Atom Concentration Curves to Obtain a Perfect Si Ingot Using Si Melt Growth;2024
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