Numerical analysis of constitutional supercooling in heavily doped silicon crystals grown using the Czochralski method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. Crystal growth and evaluation of silion for VLSI and ULSI;Eranna,2015
2. Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals
3. Heavily Boron-Doped Silicon Single Crystal Growth: Constitutional Supercooling
4. Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
5. Antimony Concentration Limitation in Dislocation-Free CZ Silicon Crystals
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1. A cost-effective approach for transitioning to larger wafer production by small Czochralski pullers;Journal of Crystal Growth;2024-02
2. Evaluation of numerical simulation of constitutional supercooling during heavily Boron-Doped silicon crystal growth using Cz method;Journal of Crystal Growth;2023-10
3. Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions;Crystal Growth & Design;2023-04-05
4. Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field;CrystEngComm;2023
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