Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski Silicon;Wang;J. Cryst. Growth,2011
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3. The As–Si (Arsenic–Silicon) system;Olesinski;Bull. Alloy Phase Diagrams,1985
4. Interface morphological instability in Czochralski silicon crystal growth from heavily Sb-doped melt;Kim;J. Electrochem. Soc.,1979
5. Heavily boron-doped silicon single crystal growth: Constitutional supercooling;Taishi;Jpn. J. Appl. Phys.,2000
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