Simulation of the Inductor Structure to Improve FZ Thermal Fields

Abstract

The floating zone (FZ) is one of the important methods for pulling silicon single crystals, but there are still problems of an unstable thermal field and crystallization difficulties. They will directly affect the growth of single crystals, resulting in defects and even fractures, seriously reducing production efficiency. Based on this, the effect of the modified inductor structure on the FZ thermal field is investigated in this paper. Using COMSOL 6.0 simulation software, 2D and 3D FZ models are established. The inductor steps under the 2D model and the inductor slits under the 3D model are compared to analyze the effects of steps and slits on the 8-inch FZ thermal field and melt flow. The distributions of temperature fields and melt flow in the melting zone under the action of the axial magnetic field are calculated by finite element analysis. The results show that the melt under the introduction of steps in the 2D model and the cross-slit structure in the 3D model is the most stable and favorable for crystal growth, which matches the actual production.