Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions-Reference-Cited by-同舟云学术

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Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions

Published:2023-04-05 Issue:5 Volume:23 Page:3393-3401
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Zhou Huiqin¹^ORCID,Miura Hitoshi²^ORCID,Dang Yifan¹^ORCID,Fukami Yuma¹,Takemoto Hisaki¹,Harada Shunta¹³,Tagawa Miho¹³^ORCID,Ujihara Toru¹³

Affiliation:

1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. Graduate School of Natural Sciences, Nagoya City University, Yamamohata 1, Mizuho-cho, Mizuho-ku, Nagoya 467-8501, Japan

3. Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Funder

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c01512

Reference36 articles.

1. Material science and device physics in SiC technology for high-voltage power devices

2. Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals

3. High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

4. Deflection of threading dislocations in patterned 4H–SiC epitaxial growth

5. Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of coil frequency on the carbon transport in the top-seeded solution growth of SiC single crystal;Journal of Crystal Growth;2024-10

2. Wafer-Scale p-Type SiC Single Crystals with High Crystalline Quality;Crystal Growth & Design;2024-06-19

3. Effect of Solution Components on Solvent Inclusion in SiC Solution Growth;Crystal Growth & Design;2024-02-02

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