Deflection of threading dislocations in patterned 4H–SiC epitaxial growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor
2. Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation
3. Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique
4. Dislocation conversion in 4H silicon carbide epitaxy
5. Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
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3. Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions;Crystal Growth & Design;2023-04-05
4. Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC;Crystal Growth & Design;2023-01-06
5. Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals;Journal of Crystal Growth;2020-02
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