Dislocation conversion in 4H silicon carbide epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference42 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. 4H-SiC MESFET's with 42 GHz f/sub max/
3. Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode
4. X-Ray Topographic Studies of Defects in PVT 6H-SiC Substrates and Epitaxial 6H-SiC Thin Films
5. Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates
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1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03
2. Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment;Defect and Diffusion Forum;2024-08-22
3. Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing<sup>®</sup>;Defect and Diffusion Forum;2024-08-22
4. High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor;Coatings;2024-07-20
5. Formation of basal plane dislocations by stress near epilayer/substrate interface of large-diameter SiC wafers with thick epitaxial layers;Journal of Applied Physics;2024-06-17
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