Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates-Reference-Cited by-同舟云学术

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

Published:2005-05 Issue: Volume:483-485 Page:97-100
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Tsuchida Hidekazu¹,Miyanagi Toshiyuki¹,Kamata Isaho¹,Nakamura Tomonori²,Izumi Kunikaza²,Nakayama Koji³,Ishii R.¹,Asano Katsunori³,Sugawara Yoshitaka³

Affiliation:

1. Central Research Institute of Electric Power Industry (CRIEPI)

2. Central Research Institute of Electric Power Industry

3. Kansai Electric Power Co., Inc.

Abstract

In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-1) substrates yields a relatively low density of BPDs compared to growth on (0001). The electrical characteristics of pn diodes were also investigated, and the suppressed forward degradation and high-voltage blocking performance were obtained in the use of the (000-1) epilayers.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.483-485.97.pdf

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