Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1756218
Reference18 articles.
1. SiC Power Devices: How to be Competitive towards Si-Based Solutions?
2. Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
3. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
4. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
5. Stacking-fault formation and propagation in 4H-SiC PiN diodes
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1. Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective;Japanese Journal of Applied Physics;2024-01-15
2. Effect of basal plane dislocation structures on single Shockley-type stacking fault expansion rate in 4H-SiC;Japanese Journal of Applied Physics;2024-01-04
3. Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs);Journal of Physics D: Applied Physics;2023-05-10
4. Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers;Journal of Electronic Materials;2023-03-29
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