Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices-Reference-Cited by-同舟云学术

Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

Published:2004-06 Issue: Volume:457-460 Page:1113-1116
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Sumakeris Joseph J.¹,Das Mrinal K.²,McD. Hobgood H.³,Müller Stephan G.³,Paisley Michael J.²,Ha Seo Young⁴,Skowronski Marek⁴,Palmour John W.³,Carter Jr. Calvin H.²

Affiliation:

1. Cree Research, Inc.

2. Cree Incorporation

3. Cree, Incorporation

4. Carnegie Mellon University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.1113.pdf

Reference6 articles.

1. J.P. Bergman, H. Lendenmann, P.A. Nilsson, U. Lindefelt, P. Skytt: Mater. Sci. Forum Vol. 353-356 (2001) p.299.

2. A. Galeckas, J. Linnros and P. Pirouz: Appl. Phys. Lett. Vol. 81, (2002) p.883.

3. H. Lendenmann, J.P. Bergman, F. Dahlquist and C. Hallin: Mat. Sci. Forum Vol. 433-436 (2003) p.901.

4. M. Paisley, J. Sumakeris and O. Kordina, U. S Patent # 6, 569, 250 B2 (2003).

5. S. Ha, P. Mieszkowski, M. Skowronski, L. Rowland: Cryst. Growth., Vol. 244 (2002) p.257.

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