Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes-Reference-Cited by-同舟云学术

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

Published:2016-09-21 Issue:11 Volume:120 Page:115101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tawara T.,Miyazawa T.,Ryo M.,Miyazato M.,Fujimoto T.,Takenaka K.,Matsunaga S.,Miyajima M.,Otsuki A.,Yonezawa Y.,Kato T.,Okumura H.,Kimoto T.,Tsuchida H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962717

Reference27 articles.

1. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

2. Degradation of hexagonal silicon-carbide-based bipolar devices

3. On the driving force for recombination-induced stacking fault motion in 4H–SiC

4. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

5. Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer

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