Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes-Reference-Cited by-同舟云学术

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

Published:2018-01-14 Issue:2 Volume:123 Page:025707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tawara T.¹²,Matsunaga S.¹²,Fujimoto T.²,Ryo M.²,Miyazato M.¹²,Miyazawa T.³,Takenaka K.¹²,Miyajima M.¹²,Otsuki A.²,Yonezawa Y.¹,Kato T.¹,Okumura H.¹^ORCID,Kimoto T.⁴,Tsuchida H.³

Affiliation:

1. National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba 305-8569, Japan

2. Fuji Electric Co., Ltd., Fuji, Hino 191-8502, Japan

3. Central Research Institute of Electric Power Industry, Nagasaka, Yokosuka 240-0196, Japan

4. Kyoto University, Kyotodaigaku-Katsura, Nishikyo 615-8510, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5009365

Reference19 articles.

1. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

2. Degradation of hexagonal silicon-carbide-based bipolar devices

3. Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

4. Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress

5. Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

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