Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes-Reference-Cited by-同舟云学术

Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

Published:2016-03-07 Issue:9 Volume:119 Page:095711
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tanaka Atsushi,Matsuhata Hirofumi,Kawabata Naoyuki,Mori Daisuke,Inoue Kei,Ryo Mina,Fujimoto Takumi,Tawara Takeshi,Miyazato Masaki,Miyajima Masaaki,Fukuda Kenji,Ohtsuki Akihiro,Kato Tomohisa,Tsuchida Hidekazu,Yonezawa Yoshiyuki,Kimoto Tsunenobu

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4943165

Reference35 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

3. Dislocation evolution in 4H-SiC epitaxial layers

4. Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes

5. Recombination-Induced Stacking Faults: Evidence for a General Mechanism in Hexagonal SiC

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