Dislocation evolution in 4H-SiC epitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference16 articles.
1. Use of synchrotron radiation in X-ray diffraction topography
2. D. K. Bowen and B. K. Tanner,High Resolution X-Ray Diffractometry and Topography(Taylor & Francis, London, 1998).
3. Investigation of domain evolution in sublimation epitaxy of SiC
4. Growth of 6H and 4H–SiC by sublimation epitaxy
5. Step-Controlled Epitaxial Growth of High-Quality SiC Layers
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