Recombination-Induced Stacking Faults: Evidence for a General Mechanism in Hexagonal SiC
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.96.025502/fulltext
Reference23 articles.
1. Stacking fault energy of 6H-SiC and 4H-SiC single crystals
2. Yield and fracture properties of the wide band-gap semiconductor 4H-SiC
3. Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
4. Theory of recombination-enhanced defect reactions in semiconductors
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