Theory of recombination-enhanced defect reactions in semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.12.3286/fulltext
Reference21 articles.
1. Observation of Recombination-Enhanced Defect Reactions in Semiconductors
2. Generation ofFCenters at Low Temperature
3. F centre production in alkali halides by radiationless electron hole recombination
4. Proposed Excitonic Mechanism of Color-Center Formation in Alkali Halides
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