Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes-Reference-Cited by-同舟云学术

Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

Published:2024-08-19 Issue:5 Volume:42 Page:
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:

Author:

Li Jian-Sian¹^ORCID,Chiang Chao-Ching¹^ORCID,Wan Hsiao-Hsuan¹^ORCID,Stepanoff Sergei P.²³^ORCID,Ren Fan¹^ORCID,Haque Aman⁴^ORCID,Wolfe Douglas²³⁵⁶^ORCID,Pearton S. J.⁷^ORCID

Affiliation:

1. Department of Chemical Engineering, University of Florida 1 , Gainesville, Florida 32611

2. Materials Science and Engineering Department, The Pennsylvania State University 2 , University Park, Pennsylvania 16802

3. Applied Research Laboratory, The Pennsylvania State University 3 , University Park, Pennsylvania 16802

4. Department of Mechanical Engineering, The Pennsylvania State University 4 , University Park, Pennsylvania 16802

5. Engineering Science and Mechanics Department, The Pennsylvania State University 5 , University Park, Pennsylvania 16802

6. Ken and Mary Alice Lindquist Nuclear Engineering Department, The Pennsylvania State University 6 , University Park, Pennsylvania 16802

7. Department of Materials Science and Engineering, University of Florida 7 , Gainesville, Florida 32611

Abstract

Co-60 gamma irradiation of SiC merged-PiN Schottky (MPS) diodes up to fluences of 1 Mrad (Si) produces increases in both forward and reverse current, with less damage when the devices are biased during irradiation. Subsequent injection of minority carriers by forward biasing at 300 K can partially produce some damage recovery, but at high forward biases also can lead to further degradation of the devices, even in the absence of radiation damage. Recombination-enhanced annealing by carrier injection overall is not an effective technique for recovering gamma-induced damage in SiC MPS diodes, especially when compared to other near athermal methods like electron wind force annealing.

Funder

Defense Threat Reduction Agency

Publisher

American Vacuum Society

Link

https://pubs.aip.org/avs/jvb/article-pdf/doi/10.1116/6.0003819/20118993/052203_1_6.0003819.pdf

Reference42 articles.

1. Radiation hardness of semiconductor laser diodes for space communication

2. The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

3. Silicon carbide JFET radiation response

4. SiC detectors: A review on the use of silicon carbide as radiation detection material