High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth-Reference-Cited by-同舟云学术

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High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

Published:2012-10-22 Issue:11 Volume:5 Page:115501
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Yamamoto Yuji,Harada Shunta,Seki Kazuaki,Horio Atsushi,Mitsuhashi Takato,Ujihara Toru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=11/a=115501/pdf

Cited by 73 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of coil frequency on the carbon transport in the top-seeded solution growth of SiC single crystal;Journal of Crystal Growth;2024-10

2. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

3. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01

4. Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method;Materials Science in Semiconductor Processing;2024-06

5. Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds;Journal of Crystal Growth;2024-05

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