Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds-Reference-Cited by-同舟云学术

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Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds

Published:2024-05 Issue: Volume:634 Page:127691
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Eto Kazuma^ORCID,Mitani Takeshi^ORCID,Momose Kenji,Kato Tomohisa

Publisher

Elsevier BV

Reference31 articles.

1. Defect engineering in SiC technology for high-voltage power devices

2. Growth of SiC polytypes by the physical vapour transport technique

3. Bulk and epitaxial growth of silicon carbide

4. Silicon carbide

5. Ultrahigh-quality silicon carbide single crystals

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers;Micromachines;2024-05-21

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