Real-time prediction of crystal/melt interface shape during Czochralski crystal growth-Reference-Cited by-同舟云学术

Real-time prediction of crystal/melt interface shape during Czochralski crystal growth

Published:2018 Issue:43 Volume:20 Page:6925-6931
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Ding Junling¹²³⁴⁵^ORCID,Liu Lijun¹²³⁴⁵^ORCID

Affiliation:

1. Key Laboratory of Thermo-Fluid Science and Engineering

2. Ministry of Education

3. School of Energy and Power Engineering

4. Xi'an Jiaotong University

5. Xi'an

Abstract

A novel method for real-time prediction of the varied interface shape for CZ crystal growth.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C8CE01503A

Reference20 articles.

1. Effect of the crystal–melt interface on the grown-in defects in silicon CZ growth

2. K. Nakamura , S.Maeda , S.Togawa , T.Saishoji and J.Tomioka , 6th Symposium on High Purity Silicon held at the 198th Meeting of the Electrochemical-Society , Phoenix , 2000 , Oct

3. Effects of crystal rotation rate on the melt–crystal interface of a CZ-Si crystal growth in a transverse magnetic field

4. Influence of solid–liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fields

5. In-situ detection of growth striations by crystallization electromotive force measurement during Czochralski crystal growth

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