In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(001) quantum dots

Author:

Takahasi M.,Mizuki J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors;Japanese Journal of Applied Physics;2018-04-16

2. Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction;Journal of Applied Physics;2015-11-14

3. Quantitative monitoring of InAs quantum dot growth using X-ray diffraction;Journal of Crystal Growth;2014-09

4. RHEED transients during InAs quantum dot growth by MBE;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03

5. Influence of In and As fluxes on growth of self-assembled InAs quantum dots on GaAs(001);Journal of Crystal Growth;2011-05

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