In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(001) quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. M. Sugawara (Ed.), Self-assembled InGaAs/GaAs quantum dots, Semiconductors and Semimetals, vol. 60, Academic Press, New York, 1999.
2. In situprobing at the growth temperature of the surface composition of (InGa)As and (InAl)As
3. Intermixing and shape changes during the formation of InAs self-assembled quantum dots
4. Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
5. Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy
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1. In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors;Japanese Journal of Applied Physics;2018-04-16
2. Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction;Journal of Applied Physics;2015-11-14
3. Quantitative monitoring of InAs quantum dot growth using X-ray diffraction;Journal of Crystal Growth;2014-09
4. RHEED transients during InAs quantum dot growth by MBE;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
5. Influence of In and As fluxes on growth of self-assembled InAs quantum dots on GaAs(001);Journal of Crystal Growth;2011-05
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