In situprobing at the growth temperature of the surface composition of (InGa)As and (InAl)As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108318
Reference11 articles.
1. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
2. High Resolution Electron Microscopy Study of Indium Distribution in InAs/GaAs Multilayers
3. Strained Layer Heterostructures and Superlattices Based on Group IV Elements
4. Atomic‐scale roughness of GaAs/AlAs interfaces: A Raman scattering study of asymmetrical short‐period superlattices
5. Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures
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