RHEED transients during InAs quantum dot growth by MBE-Reference-Cited by-同舟云学术

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RHEED transients during InAs quantum dot growth by MBE

Published:2012-03 Issue:2 Volume:30 Page:02B128
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Shimomura K.,Shirasaka T.,Tex D. M.,Yamada F.,Kamiya I.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3694019

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine-learning-assisted and real-time-feedback-controlled growth of InAs/GaAs quantum dots;Nature Communications;2024-03-29

2. Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots;Nanomaterials;2023-02-28

3. Multiclass classification of reflection high-energy electron diffraction patterns using deep learning;Journal of Crystal Growth;2022-09

4. Nucleation and diffusion processes during the stacking of bilayer quantum dot InAs/GaAs heterostructures;Journal of Crystal Growth;2021-02

5. Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction;Journal of Applied Physics;2015-11-14

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