Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction-Reference-Cited by-同舟云学术

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Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

Published:2015-11-14 Issue:18 Volume:118 Page:185303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shimomura Kenichi¹,Suzuki Hidetoshi²,Sasaki Takuo³,Takahasi Masamitu³,Ohshita Yoshio¹,Kamiya Itaru¹^ORCID

Affiliation:

1. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

2. Faculty of Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan

3. Quantum Beam Science Center, Japan Atomic Energy Agency, Koto 1-1-1, Sayo-cho, Hyogo 679-5148, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935456

Reference31 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Determination of the InAs–GaAs(100) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS)

3. Strain effect on band offsets at pseudomorphic InAs/GaAs heterointerfaces characterized by x-ray photoemission spectroscopy

4. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure

5. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

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1. Atomic layer deposition of diethylzinc/zinc oxide on InAs surface quantum dots: Self-clean-up and passivation processes;Applied Surface Science;2023-03

2. Anomalous photoluminescence of InAs surface quantum dots: intensity enhancement and strain control by underlying quantum dots;Nanotechnology;2022-07-25

3. Submonolayer stacking growth of In(Ga)As nanostructures for optoelectronic applications: an alternative for Stranski–Krastanov growth;Japanese Journal of Applied Physics;2021-04-01

4. Change in Topography of InAs Submonolayer Nanostructures at the 2D to 3D Transition;physica status solidi (b);2020-12-15

5. Synchrotron Radiation-Based Techniques Available at QST Advanced Characterization Nanotechnology Platform (National Institutes for Quantum and Radiological Science and Technology);Materia Japan;2019-12-01

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